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In this article, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied. The structure is characterized by the use of the base-gate short connection mode, instead of the conventional base-source short connection mode in SiC Vertical Double-diffusion MOSFET (VDMOS). It found that the device can obviously improve many problems of SiC Insulated Gate Bipolar transistor (IGBT) caused by the p-type substrates and eliminate the latch-up effect, having very bright prospects in high power and low frequency applications. The dynamic and static characteristics of the SiC GCBT are studied in detail and compared with SiC VDMOS, SiC IGBT and Si IGBT. Through comparative studies, the analysis results indicate that SiC GCBT has superior static characteristics, including a higher breakdown voltage, a relatively smaller threshold voltage (2.98V) and lower on-state voltage drop, and a much larger on-state current which is 28% higher than that of Si IGBT and 71% higher than that of SiC IGBT. In terms of dynamic characteristics, SiC GCBT has the shortest turn-on time, and the turn-off characteristics of the device are also improved compared with SiC and Si IGBT.

Simulation Study on Dynamic and Static Characteristics of Novel SiC Gate-Controlled Bipolar-Field-Effect Composite Transistor