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In this paper, we report on achieving the first high performance lateral <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 Schottky barrier diode (SBD) on sapphire substrate via transferring <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 nano-membrane channel from a low dislocation density bulk <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 substrate. Non field-plated lateral SBDs with Schottky&#x2013;Ohmic contact distance of 4, 6, 11, and <inline-formula> <tex-math notation="LaTeX">$15 \mu$ </tex-math></inline-formula>m demonstrate a reverse breakdown voltage (BV) of 0.64, 0.85, 1.2, and 1.7 kV with on resistance (<inline-formula> <tex-math notation="LaTeX">$R_\text {on}$ </tex-math></inline-formula>) of 47, 66, 91, and 190 <inline-formula> <tex-math notation="LaTeX">$\omega \cdot $ </tex-math></inline-formula>mm, respectively. This lateral <inline-formula> <tex-math notation="LaTeX">$R_{\text {on}, \text{sp}}$ </tex-math></inline-formula> &#x007E; BV performance is comparable to that of vertical SBDs. Combining with 107 &#x007E; 108 high temperature current on/off ratio, <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 SBD shows its great promise for power rectifying once the <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 drift layer epitaxial growth becomes more mature.

ieee journal of the electron devices society

Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

Lateral $\beta$ -Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

Lateral $\beta$ -Ga₂O₃ Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV