Open AccessIn-Line Tunnel Field Effect Transistor: Drive Current Improvement
Author(s) -
Woojin Park,
Amir N. Hanna,
Arwa T. Kutbee,
Muhammad Mustafa Hussain
Publication year - 2018
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2018.2844023
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the subthreshold swing, and the intrinsic time delay, etc. The drive current of the in-line TFET is enhanced nearly 7× compared to the conventional TFET. It also shows a significantly reduced subthreshold swing of 37.2 mV/dec.
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