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We demonstrate a high-mobility and H2-anneal tolerant InGaSiO/InGaZnO/InGaSiO double heterochannel (DH) thin film transistor (TFT) for 3-D integration with Si CMOS-LSI applications. A novel oxide semiconductor material, InGaSiO (Si/In ratio > 0.47) was found to exhibit semiconductor property even after H2 annealing at 380 °C, whereas a conventional InGaZnO layer changed into a metallic one. Moreover, the DH channel TFT was operated in an enhancement mode and achieved a high mobility of 30 cm2/Vs after the H2 annealing. The proposed DH channel TFT has a potential as a high-performance back end of line transistor with Si-CMOS process compatibility.

High-Mobility and H2-Anneal Tolerant InGaSiO/InGaZnO/InGaSiO Double Hetero Channel Thin Film Transistor for Si-LSI Compatible Process

High-Mobility and H₂-Anneal Tolerant InGaSiO/InGaZnO/InGaSiO Double Hetero Channel Thin Film Transistor for Si-LSI Compatible Process