English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode. One of the approaches for ultralow power consumption is normally off computing by utilizing nonvolatile memory. After the discovery of ferroelectricity in HfO<sub>2</sub> which is compatible to CMOS integration, ferroelectric nonvolatile memory has been revisited. In this paper, toward normally off computing, we have proposed, designed, and fabricated nonvolatile SRAM integrated with ferroelectric HfO<sub>2</sub> capacitor in a simple architecture with two capacitors. Fundamental store and recall operation have been demonstrated. This device technology will open a new path for ultralow power IoT application.

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO2 Capacitor for Normally Off Application

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO₂ Capacitor for Normally Off Application