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An anomalous threshold-voltage (<inline-formula> <tex-math notation="LaTeX">$V_{t} $ </tex-math></inline-formula>) spread of the program-inhibited cell is investigated for the first time in NAND flash memory. The program disturb characteristics are studied by applying the program-inhibited stress on the <inline-formula> <tex-math notation="LaTeX">${N}$ </tex-math></inline-formula>th cell of the unselected bitline with various string patterns for the 0th to (<inline-formula> <tex-math notation="LaTeX">$N-1$ </tex-math></inline-formula>)th cell, using the global self-boosting method. Distinguishing features of the variance of the number of injected electrons (<inline-formula> <tex-math notation="LaTeX">$\sigma _{n}^{2} $ </tex-math></inline-formula>) into the floating gate are observed. The variance is proportional to the mean value of injected electrons (<inline-formula> <tex-math notation="LaTeX">$\bar {n}$ </tex-math></inline-formula>) times 10. The other is proportional to <inline-formula> <tex-math notation="LaTeX">$\bar {n}$ </tex-math></inline-formula> times 20 and occurs only when the (<inline-formula> <tex-math notation="LaTeX">$N-1$ </tex-math></inline-formula>)th cell is programmed in a high <inline-formula> <tex-math notation="LaTeX">$V_{t} $ </tex-math></inline-formula> level and the other cells are in the erased state. A 3-D TCAD simulation reveals that the former case is attributed to Fowler&#x2013;Nordheim tunneling from the insufficiently boosting channel, and the latter is explained by hot-electron injection owing to the strong lateral electric field between the <inline-formula> <tex-math notation="LaTeX">${N}$ </tex-math></inline-formula>th and (<inline-formula> <tex-math notation="LaTeX">$N-1$ </tex-math></inline-formula>)th cells.

Impact of String Pattern on the Threshold-Voltage Spread of Program-Inhibited Cell in NAND Flash