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Carrier-induced ferromagnetic semiconductors (FMSs) are promising for non-volatile and reconfigurable spintronics devices with low-power consumption, since they are unique materials having both ferromagnetic and semiconducting properties. To be used for realistic devices, however, FMSs must satisfy several fundamental requirements; high Curie temperature ( $T_{\mathrm{C}}$ ) and large magnetic anisotropy. We demonstrate high-temperature ferromagnetism and large magnetic anisotropy in heavily Fe-doped n-type ferromagnetic semiconductor  $(\text{In}_{1-\mathrm{x}},\text{Fe}_{\mathrm{x}}) \text{Sb} (x=20-\ 35\%)$  thin films grown by low-temperature molecular beam epitaxy. The  $(\text{In}_{1-\mathrm{x}},\text{Fe}_{\mathrm{x}}) \text{Sb}$  thin films with  $x=20-35\%$  maintain the zinc-blende crystal and band structure with single-phase ferromagnetism. The  $T_{\mathrm{C}}$  of  $(\text{In}_{1-\mathrm{x}},\text{Fe}_{\mathrm{x}}) \text{Sb}$  reaches 390 K at  $x=35 \%$ , which is significantly higher than room temperature and the highest value so far reported in III-V based ferromagnetic semiconductors. Moreover, large coercive force ( $H_{\mathrm{C}}=160\ \text{Oe}$ ) and large remanent magnetization  $(M_{\mathrm{r}}/M_{\mathrm{S}}=71\%)$  have been observed for a  $(\text{In}_{1-\mathrm{x}},\text{Fe}_{\mathrm{x}}) \text{Sb}$  thin film with  $x=35\%$ . Our results indicate that the n-type ferromagnetic semiconductor  $(\text{In}_{1-\mathrm{x}},\text{Fe}_{\mathrm{x}}) \text{Sb}$  is very promising for spintronics devices operating at room temperature.

Heavily Fe-doped n-type ferromagnetic semiconductor (In, Fe)Sb with high Curie temperature and large magnetic anisotropy