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Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristicsof Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nmdimensions are obtained by self-consistent method using coupled Schrodinger-Poisson solver taking into account the quantum mechanical effects. Although,ATLAS simulations to determine current and other short channel effects in thisdevice have been demonstrated in recent literature, C-V & Ballistic I-Vcharacterizations by using self-consistent method are yet to be reported. C-Vcharacteristic of this device is investigated here with the variation of bottomgate voltage. The depletion to accumulation transition point (i.e. Thresholdvoltage) of the C-V curve should shift in the positive direction when thebottom gate is negatively biased and our simulation results validate thisphenomenon. Ballistic performance of this device has also been studied with thevariation of top gate voltage.

Self Consistent Simulation of C-V Characterization and Ballistic Performance of Double Gate SOI Flexible-FET Incorporating QM Effects