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Semiconductor electronics is strongly dominated by silicon technology. However silicon technology does not allow easy integration with optical component since silicon is a poor light emitter. The unique properties of Si nanocrystals (nc-Si) can be exploited to fabricate Si-based light source. We will introduce a quantum confinement effect in the nc-Si embedded in a silicon nitride formed by PECVD. The band gap of the nc-Si could be controlled from 1.38 to 3.02 eV by decreasing the nanocrystal size. In addition, we will demonstrate a silicon light emitter with a transparent doping layer on nc-Si embedded in silicon nitride active layer by using ITO and n-type wide bandgap semiconducting layer. This light emitter has high external quantum efficiency of 1.6%, which is the highest value ever reported in Si-based visible light emitters.

High efficiency silicon visible light emitter using silicon nanocrystals in silicon nitride matrix and transparent doping layer