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Using microwave-assisted plasma chemical vapour deposition (CVD) a layer ofNitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of anon-conducting diamond layer, which itself is situated on a Silicon wafer. Thisstructure is then shaped into Hall-bar devices of various dimensions usingoptical lithography and dry-etching techniques. The devices' electricalproperties are investigated at various temperatures using a cryogen-freedilution refrigerator.

Fabrication and Investigation of Nitrogen doped Ultra-Nano-Crystalline Diamond Hall-bar Devices