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The low luminous efficiency of indium gallium nitride (InGaN) light-emitting diodes (LED) in the &#x201C;green gap&#x201D; range has been a long unsettled issue confounding the researchers. One of the main obstacles comes from the intrinsic polarization field in the incumbent Ga-polar LEDs (Ga-LEDs), where the polarization field will bend the energy band thus reducing the radiative recombination efficiency. The scenario will become different when we reverse the polarization field with the adoption of N-polar GaN, which should be a promising candidate to obtain LEDs with high luminous efficiency in the &#x201C;green gap&#x201D; range. In this study, the optical and electronic performances of InGaN LEDs in the &#x201C;green gap&#x201D; range with Ga- and N-polar have been numerically investigated. The results demonstrate that the light-output power of N-polar LED (N-LED) is &#x007E;1.69-fold higher than that of Ga-LED at a current density of 1250 A/cm2, thus leading to a significantly improved internal quantum efficiency. Meanwhile, the turn-on voltage of N-LED is lowered by &#x007E;17.3&#x0025; compared to that of Ga-LED. As revealed by the energy band diagram, the superior optoelectronic performance of N-LED is mainly attributed to the stronger carrier confinement in the active region and the lower carrier injection barriers. This study suggests the prospective realization of high luminous efficiency InGaN LEDs in the &#x201C;green gap&#x201D; range by the implementation of N-LEDs.

Superior Optoelectronic Performance of N-Polar GaN LED to Ga-Polar Counterpart in the “Green Gap” Range