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The surface passivation of a CMOS image sensor (CIS) is highly beneficial for the overall improvement of a device performance. We employed the thermal atomic layer deposition (T-ALD) and plasma enhanced (PE-ALD) techniques for the deposition of 20 nm HfO2 as well as stacked with 3 and 5 nm Al2O3 thin films. The HfO2/Si and Al2O3/HfO2/Si metal-oxide-semiconductor structures were used to analyze the fixed charge density (<inline-formula> <tex-math notation="LaTeX">$\text{Q}_{\mathrm {f}}$ </tex-math></inline-formula>) and interface trap density (<inline-formula> <tex-math notation="LaTeX">$\text{D}_{\mathrm {it}}$ </tex-math></inline-formula>). The as-synthesized samples show high <inline-formula> <tex-math notation="LaTeX">$\text{D}_{\mathrm {it}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$\text{Q}_{\mathrm {f}}$ </tex-math></inline-formula> values (1012 cm&#x2212;2eV&#x2212;1) and a minority carrier lifetime of 15&#x2013;300 <inline-formula> <tex-math notation="LaTeX">$\mu \text{s}$ </tex-math></inline-formula>. The finite-difference time-domain simulation of high-k dielectrics confirmed that the Al2O3 (top)/HfO2 stacked structures expected higher quantum efficiency for CIS application. The effect of vacuum annealing (VA) and forming gas annealing (FGA) treatments succeeded with the decomposition of the <inline-formula> <tex-math notation="LaTeX">$\text{D}_{\mathrm {it}}$ </tex-math></inline-formula> and increase in carrier lifetime. The H2 ambient FGA samples showed a remarkable decrease in the <inline-formula> <tex-math notation="LaTeX">$\text{D}_{\mathrm {it}}$ </tex-math></inline-formula> values. To improve the overall performance of the device after passivation, we employed an Al2O3/HfO2 bilayer structure, which showed a low <inline-formula> <tex-math notation="LaTeX">$\text{D}_{\mathrm {it}}$ </tex-math></inline-formula> of 1011 cm&#x2212;2eV&#x2212;1 and a minority carrier lifetime of <inline-formula> <tex-math notation="LaTeX">$\sim 3$ </tex-math></inline-formula>,700 <inline-formula> <tex-math notation="LaTeX">$\mu \text{s}$ </tex-math></inline-formula> after 400 &#x00B0;C and 30 min FGA. We believe that this surface passivation strategy will pave way for future CIS technology regarding the development of lower defective surface and superior performance.

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Effect of ALD Processes on Physical and Electrical Properties of HfO2 Dielectrics for the Surface Passivation of a CMOS Image Sensor Application