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The overheating stress of power devices is the main cause of converter system failures, so real-time temperature acquisition, as well as timely over-temperature protection, under various operating conditions are key to achieving a more reliable energy conversion. In this paper, an improved three-dimensional (3-D) coupled thermal model for insulated gate bipolar transistors (IGBTs) and related heatsink is constructed by considering the thermal coupling effects at both the device- and the module level. Furthermore, the coupled thermal impedance parameters are thereby extracted based on the finite-element method (FEM), so that the dynamic loss and transient temperature distribution under actual working conditions can be obtained based on this electro-thermal coupling model. Meanwhile, to avoid the overheating damage of power devices due to untimely action of the negative temperature coefficient (NTC) thermistor over-temperature protection, this article aims at the idle IGBT device in the three-level neutral-point clamped (NPC) application using IGBT half-bridge modules, combined with the emitter terminal temperature, and finally realizes the multiple over-temperature protection settings. The improved temperature monitoring methods proposed in this paper are realized by the drive and control circuits and verified through simulation and experimental results.

Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules