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Charge-trap based resistive switching (RS) has attracted attention in the resistive random-access memory (RRAM) industry due to its gradual RS behavior for multi-level and synaptic applications. In this work, in order to lower the operating current level closely related to device&#x2019;s degradation, we applied a hydrogen passivation to Zr3N2 based RRAM devices and investigated the correlation between current level and trap density, such as an interface trap density (<inline-formula> <tex-math notation="LaTeX">$\text{N}_{\mathrm {it}}$ </tex-math></inline-formula>) at the Zr<inline-formula> <tex-math notation="LaTeX">$_{3}\text{N}_{2}/p$ </tex-math></inline-formula>-Si layer and nitride trap density (<inline-formula> <tex-math notation="LaTeX">$\text{N}_{\mathrm {nt}}$ </tex-math></inline-formula>) within Zr3N2 films, for memory cells annealed in conventional N2 gas as well as H2 gas. Compared to the N2-annealed sample, after H2 annealing, <inline-formula> <tex-math notation="LaTeX">$\text{N}_{\mathrm {it}}$ </tex-math></inline-formula> is lowered by the hydrogen passivation effect, which results in a reduction of both current level at high resistive state (HRS) and variation of HRS and low resistive state (LRS). As a result, in the H2 annealed Zr3N2 RRAM cell, we observed a lower operation voltage/current, longer endurance, and larger read margin due to the hydrogen passivation effect.

Improved Resistive Switching Observed in Ti/Zr3N2/p-Si Capacitor via Hydrogen Passivation

Improved Resistive Switching Observed in Ti/Zr₃N₂/p-Si Capacitor via Hydrogen Passivation