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The Empty Substrate Integrated Waveguides (ESIW) maintain the advantages of the Substrate Integrated waveguide (SIW) (i.e. low-volume, low profile, lightweight, easy manufacturing, and integration in a planar circuit board), and present lower losses and higher quality factors in resonators due to the propagation of the fields through air, instead of through lossy dielectric as in SIW. The operational (monomode) bandwidth of the ESIW can be increased with the Single Ridge ESIW (SRESIW). However, the bandwidth can be further increased with the Double Ridge ESIW (DRESIW). In this paper, a brief study of possible DRESIW geometries has been performed, and two transitions from microstrip line (MS) to DRESIW with a dielectric taper geometry based on different equations are proposed. The new wideband transitions present simulated return losses in back-to-back configurations greater than 20 dB in more than a 95&#x0025; fractional bandwidth. The transition that presents a better compromise between return losses, bandwidth and ease of fabrication is manufactured. The measured return and insertion losses are better than 19.7 dB and 1.5 dB, respectively, in a 96.4&#x0025; fractional bandwidth.

Microstrip to Double Ridge Empty Substrate Integrated Waveguide Transitions Based on Exponential and Superelliptical Dielectric Taper