English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

In this work, the ON-state performance of the drain-extended metal-oxide-semiconductor (DeMOS) device with multiple RESURF junctions in the drift region is explored. Although the additional RESURF implant offers a significant improvement in the breakdown voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm {BD}}$ </tex-math></inline-formula>) and ON-resistance (<inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm {ON}}$ </tex-math></inline-formula>) compared to the conventional DeMOS, it induces an early space charge modulation (SCM) initiated quasi-saturation (QS) effects and adversely impacts the ON-state breakdown of the device. Moreover, these devices are compared for a fixed breakdown voltage where a correlation between their analog/RF performance and QS effects is established. This work also presents and validates the design guideline for multiple RESURF devices that can alleviate the SCM/QS effects by 8&#x0025; and improve the ON-state breakdown voltage by 35&#x0025; compared to the standard device, thereby maximizing the ON-state performance of the device without compromising the OFF-state breakdown.

Investigating the Correlation Between Space Charge Modulation and ON-State Breakdown in Multiple RESURF DeMOS Devices