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High-performance InAs/GaSb type-II superlattice infrared detectors and focal plane arrays (FPAs) are normally grown by molecular beam epitaxy (MBE). In this work, we demonstrate the first long-wavelength infrared InAs/GaSb superlattice FPA grown by metalorganic chemical vapor deposition (MOCVD) with clear image. High-quality superlattice material was obtained evidenced by sharp X-ray diffraction peaks and atomic flat surface. Electrical and optical measurements performed on single element detectors showed a 50% cut-off wavelength of ~ 10.1 &#x03BC;m, a dark current density of 2.5&#x00D7;10-5 A/cm2, a peak responsivity of 0.88 A/W and a peak detectivity of 1.7&#x00D7;1011 cm &#x00B7;Hz1/2/W at 80 K. A 320&#x00D7;256 FPA with 30 &#x03BC;m pixel pitch was then fabricated. With an integration time of 1.9 ms and an applied bias of -0.1 V, the FPA shows an average operability of 96.96%, a non-uniformity of 4.97%, a noise equivalent temperature difference of 51.1 mK and a peak detectivity of 2.3&#x00D7;1010 cm &#x00B7;Hz1/2/W at 80 K without thinning down the substrate.

Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array