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Lifetime estimation of power semiconductor devices have been widely investigated to improve the reliability and reduce the cost of maintenance of power converters. However in most reported work, the aging effect is not considered in the lifetime evaluation process due to the omission or limitation of thermal cycle counting method. Additionally, the electrical/thermal simulation and lifetime estimation are usually implemented in different simulators/platforms, for the same reason. Thus, to tackle these problems, a concise but comprehensive MOSFET model that enables electro-thermal modeling, aging and lifetime estimation on LTspice&#x00AE; circuit simulator is proposed in this paper. The idea comes from the fact that, MOSFET on-state resistance R<sub>ds,on</sub> is not only temperature dependent, but also widely accepted as the device failure precursor. In other words, as it carries critical information about instantaneous temperature and aging progress. Hence, co-simulation can be achieved by constructing electrical, thermal, and aging and lifetime sub-modules exclusively first, and using R<sub>ds,on</sub>, to build linkages among them. Averaged modeling technique is adopted due to the ease of establishing links among these three sub-modules, and fast simulation speed as compared to a switched converter model. Behavioral models are employed to realize the thermal cycles counting, stress accumulation and degradation evaluation. This paper demonstrates that it is possible to use a single simulation software to monitor performances of devices and circuits, and their lifetime estimation simultaneously. High-stress thermal cycling and long-term random mission profiles are applied to verify the correctness of the model and to mimic a 10-year load respectively. An accelerated aging trend can be observed in the long-term mission profile simulation, which is in agreement with the theory. Facilitated by the employment of averaged circuits, the proposed method is a good simulation/analytical tool to implement a long-term mission profile that requires reliability assessment.

A MOSFET SPICE Model With Integrated Electro-Thermal Averaged Modeling, Aging, and Lifetime Estimation