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A novel, large-signal behavioral modeling methodology for Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs), based on the canonical piecewise-linear (CPL) functions, is presented in this paper. The proposed new model employs the poly-harmonic distortion (PHD) model framework, making use of the CPL functions for interpolation of the amplitude of the dominant input signal. The CPL method is also applied to the quadratic PHD (QPHD) model framework, allowing for application to devices operating under high (greater than 3 dB) compression levels. Compared with the standard PHD/QPHD models, which require lengthy tables of parameter values to account for the varying large signal input power(s), the models described in this paper are able to predict transistor behavior at different levels of input power, from the linear region to the strongly nonlinear region (where gain compression exceeds 1 dB), with one single set of model coefficients. The basic theory of the proposed model for both RF and dc responses is provided in the paper. The proposed modeling technique is validated through simulated and experimental data from separate 6 W and 10 W GaN HEMT devices, over a wide range of load conditions and power levels. In addition, a two-dimensional polynomial-based model is used for performance comparison, with the proposed method providing comparable accuracy while requiring significantly fewer model coefficients.

A Modified Poly-Harmonic Distortion Model Based on the Canonical Piecewise Linear Functions for GaN HEMTs