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In this paper, the results show that the avalanche mode of GaAs photoconductive semiconductor switches (PCSS) requires only a low trigger optical energy of 0.567 nJ to achieve. At the bias electric field is 94 kV/cm, a trigger optical energy with sub-Nano Joule is used to trigger the PCSS, and the multiplication rate can be as high as 988. We have presented avalanche delay characteristics under the different bias electric voltage, and the physical mechanism of the avalanche delay time is analyzed. This article shows a high multiplication rate ultrafast pulse source with low-energy triggering.

998 Multiplication Rate of GaAs Avalanche Semiconductor Switch Triggered by 0.567 nJ