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A semi-lumped reconfigurable on-chip bandpass filter with GaAs pHEMT technology is presented in this paper. Three order tunable bandpass filter is designed with serial lumped capacitors, parallel resonators, and reconfigurable components. The operating bands are adjusted by field effect transistors and its corresponding gate bias circuits with GaAs technology. The semi-lumped topology, intending to reduce the size of the circuit, is employed to construct the parallel resonators, which are implemented with short-ended stubs and metal-insulator-metal capacitors. The equivalent circuit model is built to interpret the mechanism of the on-chip reconfigurable bandpass filter. Compared with the traditional tunable filters, an ultra-compactness feature and low insertion loss are obtained with the proposed design. The size of the on-chip filter is only 0.8&#x00D7;1.07 mm2, which is equivalent to 0.08&#x00D7;0.11 &#x03BB;g2 at 10 GHz. The presented filter is reconfigurable in two frequency bands, one is centered at 10 GHz with a fraction bandwidth (FBW) of 24.94% and the other is operated at 8.8 GHz with a FBW of 13.35%. The tuning range of the FBW is 30.6%. Good agreements are observed between the simulated and measured S-parameters.

An Ultra-Compact On-Chip Reconfigurable Bandpass Filter With Semi-Lumped Topology by Using GaAs pHEMT Technology