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Single-layer graphene (SLG) sheets can exhibit thermoelectric properties under the control of gate voltage. The controlled factors and regulation mechanism of SLG thermoelectric properties have become research hotspots. In this paper, a SLG thermoelectric parameter model considering carrier concentration and mobility with temperature and gate voltage is proposed. Based on the proposed model, the square resistance (<inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {s}}$ </tex-math></inline-formula>) and Seebeck coefficient (<inline-formula> <tex-math notation="LaTeX">$S$ </tex-math></inline-formula>) of the SLG are calculated. The results show that the maximum value of <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {s}}$ </tex-math></inline-formula> decreases from 5.8 <inline-formula> <tex-math notation="LaTeX">$\text{K}\Omega $ </tex-math></inline-formula> to 3.2 <inline-formula> <tex-math notation="LaTeX">$\text{K}\Omega $ </tex-math></inline-formula> at the Dirac voltage when the temperature increases from 100 K to 500 K. A large and stable <inline-formula> <tex-math notation="LaTeX">$S$ </tex-math></inline-formula> can be obtained at high voltages and temperatures. The maximum value of <inline-formula> <tex-math notation="LaTeX">$S$ </tex-math></inline-formula> can reach <inline-formula> <tex-math notation="LaTeX">$161.3~\mu \text{V}$ </tex-math></inline-formula>/K at <inline-formula> <tex-math notation="LaTeX">$T = 500$ </tex-math></inline-formula> K, exhibiting a more obvious thermoelectric characteristic. Simultaneously, the saturation law of the power factor (<inline-formula> <tex-math notation="LaTeX">$Q$ </tex-math></inline-formula>) with the change of gate voltage and the amplitude regulation of <inline-formula> <tex-math notation="LaTeX">$Q$ </tex-math></inline-formula> by temperature are obtained. This work can provide a theoretical basis for analyzing the thermoelectric characteristics of SLG.

Thermoelectric Parameter Modeling of Single-Layer Graphene Considering Carrier Concentration and Mobility With Temperature and Gate Voltage