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In this paper, we present a novel gain-enhanced sub-harmonic mixer based on 0.5-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> emitter width InGaAs/InP double heterojunction bipolar transistors (InP DHBTs). The proposed mixer consists of a transconductance stage and a gain-enhanced stage. A common-emitter transistor is used in the first stage to realize the sub-harmonic mixing while another common-emitter transistor is used in the second stage to remix the <inline-formula> <tex-math notation="LaTeX">$f_{LO+IF}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$f_{IF} $ </tex-math></inline-formula> and also amplify the <inline-formula> <tex-math notation="LaTeX">$f_{2LO+IF}$ </tex-math></inline-formula>. For further verification, a transconductance mixer and a gain-enhanced mixer were designed and fabricated. Compared with the transconductance mixer, the gain-enhanced mixer exhibits a 6.8-dB higher conversion gain with 2-dB lower LO input power and a peak up-conversion gain of 9 dB at 213 GHz with <inline-formula> <tex-math notation="LaTeX">$f_{IF} = 1$ </tex-math></inline-formula> GHz, <inline-formula> <tex-math notation="LaTeX">$f_{LO} = 106$ </tex-math></inline-formula> GHz, and <inline-formula> <tex-math notation="LaTeX">$P_{IF}=-26$ </tex-math></inline-formula> dBm<inline-formula> <tex-math notation="LaTeX">$\,\, P_{LO}= 3$ </tex-math></inline-formula> dBm. To our best knowledge, the gain-enhanced mixing structure is proposed for the first time.

A High Conversion Gain 210-GHz InP DHBT Sub-Harmonic Mixer Using Gain-Enhanced Structure