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In this paper, a performance-improved AlGaN-/GaN-Based metal-insulator-semiconductor field effect transistor (MISFET) with double P-buried layers MISFET (DP-MISFET) is proposed. The proposed structure is simulated, and its characteristics are analyzed by the Sentaurus TCAD tool; the results show that with a gate-drain spacing of <inline-formula> <tex-math notation="LaTeX">$6~\mu \text{m}$ </tex-math></inline-formula>, the optimized DP-MISFET can achieve high Baliga’s figure of merit of 3.23 GW <inline-formula> <tex-math notation="LaTeX">$\cdot $ </tex-math></inline-formula> cm−2 due to the modulation of the electric field distribution. Compared with the conventional MISFET (C-MISFET) with the breakdown voltage (BV) of 503.9 V and specific on-resistance (<inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {on, sp}}$ </tex-math></inline-formula>) of 0.63 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega ~\cdot $ </tex-math></inline-formula> cm2, the proposed structure can achieve a better trade-off between the breakdown voltage and specific on-resistance achieving <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {on, sp}}$ </tex-math></inline-formula> and BV of 0.63 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega ~\cdot $ </tex-math></inline-formula> cm2 and 1427 V, respectively.

Technology Computer Aided Design Study of GaN MISFET With Double P-Buried Layers