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Micro-scale patterned arrays and nano-scale rough morphology are promising for improving the light-extraction performance of GaN-based thin film light-emitting diodes (TFLEDs), while the light-extraction mechanisms of the multiscale architectures combining these two structures have not been investigated yet. In this report, we have adopted a pattern transfer and wet etching combined method to fabricate multiscale patterned arrays with rough morphology (msPARM) on n-GaN layers for TFLEDs and investigated their light-extraction mechanisms by the finite-difference time domain and ray-tracing combined method. The results show that the TFLEDs achieve the maximum radiant efficacy using the msPARM with an etching time of 8 min, which is increased by 16.3% and 1.7% compared with that achieved using only the patterned arrays or only the rough morphology, respectively. Most importantly, optical simulation reveals that the msPARM can provide a high transmittance for light with large emission angles from the active region using the inclined surface of micro-scale concave cones, while effectively suppressing the reflection loss for light with small emission angles using the scattering effect of nano-scale rough morphology, resulting in enhancing the light-extraction of the TFLEDs. Consequently, this study can provide a better understanding to design the multiscale structures for achieving high efficiency LEDs.

Investigation of Light-Extraction Mechanisms of Multiscale Patterned Arrays With Rough Morphology for GaN-Based Thin-Film LEDs