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A compact large-signal model for hydrogen-terminated (C–H) diamond metal-oxide field effect transistors (MOSFETs) is presented based on an improved quasi-physical zone division (QPZD) model. Unlike the conventional QPZD model for the AlGaN/GaN high-electron-mobility transistors (HEMTs), the linear-mode current-voltage (I-V) model of the diamond FET is analytically deduced with an improved velocity-electric field relation and temperature-dependent effective hole mobility <inline-formula> <tex-math notation="LaTeX">$\mu _{\mathrm {eff}}(T)$ </tex-math></inline-formula>. The I–V model can directly demonstrate the relation between the negative <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {ds}} $ </tex-math></inline-formula> and the negative <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm {ds}}$ </tex-math></inline-formula> of the p-type diamond FETs, which cannot be achieved by the conventional QPZD model. Finally, the proposed model has been verified by the on-wafer measurements of an in-house <inline-formula> <tex-math notation="LaTeX">$2\times 500\,\,\mu \text{m}$ </tex-math></inline-formula> diamond FET. The good consistency shows that the presented compact large-signal model can accurately predict the DC I-V, multibias scattering-parameters (S-parameters), and large-signal performances. The results of this paper will be useful for the microwave diamond-based transistor and circuit designs.

A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD