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With the upcoming Internet of Things (IoT), low-power devices are becoming mainstream these days. The need for memory elements able to operate at reduced biasing conditions is therefore of utmost importance. In this paper, one of the most promising capacitor-less dynamic RAM cell, the Z2-FET (zero subthreshold swings, zero impact ionization field-effect transistor), is analyzed through advanced numerical simulations to study its sub-1V operation capabilities. SiGe compounds and tuned workfunction are selected to further reduce the operating voltage to limit energy consumption. The results demonstrate functional SiGe cells with up to 75% energy reduction with respect to identical Si cells.

Simulation Perspectives of Sub-1V Single-Supply Z2-FET 1T-DRAM Cells for Low-Power

Simulation Perspectives of Sub-1V Single-Supply Z²-FET 1T-DRAM Cells for Low-Power