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In this paper, an emitter-length scalable noise and small signal model for InP heterojunction bipolar transistor (HBT) are presented. A set of scalable expressions for noise parameters based on hybrid-<inline-formula> <tex-math notation="LaTeX">$\pi $ </tex-math></inline-formula> topology in the low-frequency ranges are derived. The analytical and experimental results show that under the same bias condition, good emitter-length scaling of the noise and small signal model parameters can be achieved between <inline-formula> <tex-math notation="LaTeX">$1.6~\mu \text{m}\times 10\,\,\mu \text{m}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">$1.6~\mu \text{m}\times 20\,\,\mu \text{m}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$1.6~\mu \text{m}\times 30\,\,\mu \text{m}$ </tex-math></inline-formula> InP HBTs.

Emitter-Length Scalable Small Signal and Noise Modeling for InP Heterojunction Bipolar Transistors