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Partial Sn‐atom ordering in Sm 3 Ga 0.80–2.48 Sn 4.20–2.52
Author(s) -
Tokaychuk Yaroslav O.,
Filinchuk Yaroslav E.,
Fedorchuk Anatoliy O.,
Bodak Oksana I.
Publication year - 2003
Publication title -
acta crystallographica section c
Language(s) - English
Resource type - Journals
eISSN - 1600-5759
pISSN - 0108-2701
DOI - 10.1107/s0108270103024776
Subject(s) - crystallography , crystal structure , atom (system on chip) , homogeneity (statistics) , x ray crystallography , chemistry , tin , materials science , diffraction , physics , metallurgy , statistics , mathematics , computer science , embedded system , optics
Trisamarium digallide tristannide crystallizes with a partially ordered Pu 3 Pd 5 ‐type structure in space group Cmcm . In a single crystal of Sm 3 Ga 1.89(4) Sn 3.11(4) , the 8 g position is mostly occupied by Sn atoms (93% Sn and 7% Ga), while the 4 c and 8 f positions are occupied by a Ga/Sn statistical mixture. The evolution of the structure as a function of the Ga content has been studied by X‐ray powder diffraction on ten Sm 3 Ga 5− x Sn x samples. It is shown that the 8 g position remains occupied essentially exclusively by Sn atoms within the whole homogeneity range, with x ranging from 2.52 to 4.20.

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