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The strong spin-orbit coupling in hole spin qubits enables fast andelectrically tunable gates, but at the same time enhances the susceptibility ofthe qubit to charge noise. Suppressing this noise is a significant challenge insemiconductor quantum computing. Here, we show theoretically that hole SiFinFETs are not only very compatible with modern CMOS technology, but theypresent operational sweet spots where the charge noise is completely removed.The presence of these sweet spots is a result of the interplay between theanisotropy of the material and the triangular shape of the FinFETcross-section, and it does not require an extreme fine-tuning of theelectrostatics of the device. We present how the sweet spots appear in FinFETsgrown along different crystallographic axes and we study in detail how thebehaviour of these devices change when the cross-section area and aspect ratioare varied. We identify designs that maximize the qubit performance and couldpave the way towards a scalable spin-based quantum computer.

Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise