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The control of the electron spin by external means is a key issue forspintronic devices. Using spin- and angle-resolved photoemission spectroscopy(SARPES) with three-dimensional spin detection, we demonstrate operandoelectrostatic spin manipulation in ferroelectric GeTe and multiferroicGe1-xMnxTe. We not only demonstrate for the first time electrostatic spinmanipulation in Rashba semiconductors due to ferroelectric polarizationreversal, but are also able to follow the switching pathway in detail, and showa gain of the Rashba-splitting strength under external fields. In multiferroicGe1-xMnxTe operando SARPES reveals switching of the perpendicular spincomponent due to electric field induced magnetization reversal. This providesfirm evidence of effective multiferroic coupling which opens up magnetoelectricfunctionality with a multitude of spin-switching paths in which the magneticand electric order parameters are coupled through ferroelastic relaxationpaths. This work thus provides a new type of magnetoelectric switchingentangled with Rashba-Zeeman splitting in a multiferroic system.

Operando imaging of all-electric spin texture manipulation in ferroelectric and multiferroic Rashba semiconductors