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Electron spin qubits in silicon, whether in quantum dots or in donor atoms,have long been considered attractive qubits for the implementation of a quantumcomputer due to the semiconductor vacuum character of silicon and itscompatibility with the microelectronics industry. While donor electron spins insilicon provide extremely long coherence times and access to the nuclear spinvia the hyperfine interaction, quantum dots have the complementary advantagesof fast electrical operations, tunability and scalability. Here we present anapproach to a novel hybrid double quantum dot by coupling a donor to alithographically patterned artificial atom. Using gate-based rf reflectometry,we probe the charge stability of this double quantum dot system and thevariation of quantum capacitance at the interdot charge transition. Usingmicrowave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterisethe charge dynamics, which reveals a charge T2* of 200 ps and a relaxation timeT1 of 100 ns. Additionally, we demonstrate spin blockade at the inderdottransition, opening up the possibility to operate this coupled system as asinglet-triplet qubit or to transfer a coherent spin state between the quantumdot and the donor electron and nucleus.

Charge dynamics and spin blockade in a hybrid double quantum dot in silicon