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Metal silicides formed by means of thermal annealing processes are employedas contact materials in microelectronics. Control of the structure ofsilicide/silicon interfaces becomes a critical issue when the devicecharacteristic size is reduced below a few tens of nanometers. Here we reporton silicide clustering occurring within the channel of PtSi/Si/PtSi Schottkybarrier transistors. This phenomenon is investigated through atomisticsimulations and low-temperature resonant tunneling spectroscopy. Our resultsprovide evidence for the segregation of a PtSi cluster with a diameter of a fewnanometers from the silicide contact. The cluster acts as metallic quantum dotgiving rise to distinct signatures of quantum transport through its discreteenergy states.

PtSi Clustering In Silicon Probed by Transport Spectroscopy