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Resistive switching is one of the key phenomena for applications such asnonvolatile memories or neuromorphic computing. V3O5, a compound of thevanadium oxide Magn\'eli series, is one of the rare materials to exhibit aninsulator-metal transition (IMT) above room temperature (Tc ~ 415 K). Here wedemonstrate both static dc resistive switching (RS) and fast oscillatoryspiking regimes in V3O5 devices at room temperature (120 K below the phasetransition temperature) by applying an electric field. We use operando opticalimaging to track a reflectivity change during the RS and find that apercolating high temperature metallic phase filament is formed. Thisdemonstrates that the electrically induced RS triggers the phase transition.Furthermore, we optically capture the spiking oscillations that we link to thenegative differential resistance regime and find the filament forms anddissolves via a periodic spatio-temporal instability that we describe bynumerical simulations.

Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature