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We describe concepts for high power semiconductor rf switches, designed to handle signals at X-band with power level near 100 MW. We describe an abstract design methodology and derive a general scaling law for these switches. We also present a design and experimental work of a switch operating at the TE_{01} mode in overmoded circular waveguides. The switch is composed of an array of tee junction elements that have a p-i-n diode array window in the third arm

physical review special topics. accelerators and beams

Development of high power<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="italic">X</mml:mi></mml:math>-band semiconductor microwave switch for pulse compression systems of future linear colliders

Development of high powerX-band semiconductor microwave switch for pulse compression systems of future linear colliders