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We show that pressure applied to twisted WSe$_2$ can enhance the many-bodygap and region of stability of a fractional Chern insulator at filling $\nu =1/3$. Our results are based on exact diagonalization of a continuum model,whose pressure-dependence is obtained through {\it ab initio} methods. Weinterpret our results in terms of a {\it magic line} in the pressure-{\itvs}-twist angle phase diagram: along the magic line, the bandwidth of thetopmost moir\'e valence band is minimized while simultaneously its quantumgeometry nearly resembles that of an ideal Chern band. We expect our results togeneralize to other twisted transition metal dichalcogenide homobilayers.

Pressure--enhanced fractional Chern insulators in moir\'e transition metal dichalcogenides along a magic line