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Silicon vacancy centers in silicon carbide are promising candidates forstoring and manipulating quantum information. Implementation of fast quantumgates is an essential requirement for quantum information processing. In a lowmagnetic field, the resonance frequencies of silicon vacancy spins are in therange of a few MHz, the same order of magnitude as the Rabi frequencies oftypical control fields. As a consequence, the rotating wave approximationbecomes invalid and nonlinear processes like the absorption and emission ofmultiple photons become relevant. This work focuses on multi-photon transitionsof negatively charged silicon vacancies driven by a strong RF field. We presentcontinuous-wave optically detected magnetic resonance (ODMR) spectra measuredat different RF powers to identify the 1-, 2-, and 3-RF photon transitions ofdifferent types of the silicon vacancy in the 6$H$-SIC polytype. Time-resolvedexperiments of Rabi oscillations and free induction decays of these multiple RFphoton transitions were observed for the first time. Apart from zero-fielddata, we also present spectra in magnetic fields with different strength andorientation with respect to the system's symmetry axis.

Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC