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Non-reciprocal transport, where the left to right flowing current differsfrom the right to left flowing one, is an unexpected phenomenon in bulkcrystals. BiTeBr is a non-centrosymmetric material, with a giant Rashbaspin-orbit coupling which presents this unusual effect when placed in anin-plane magnetic field. It has been shown that this effect depends strongly onthe carrier density, however, in-situ tuning has not yet been demonstrated. Wedeveloped a method where thin BiTeBr flakes are gate tuned via ionic-liquidgating through a thin protective hBN layer. Tuning the carrier density allows amore than \SI{400}{\percent} variation of the non-reciprocal response. Ourstudy serves as a milestone on how a few-atomic-layer-thin van der Waalsprotection layer allows ionic gating of chemically sensitive, exoticnanocrystals.

In situ tuning of symmetry-breaking induced non-reciprocity in giant-Rashba semiconductor BiTeBr