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In Peierls-distorted materials, photoexcitation leads to a strongly coupledtransient response between structural and electronic degrees of freedom, alwaysmeasured independently of each other. Here we use transient reflectivity in theextreme ultraviolet to quantify both responses in photoexcited bismuth in asingle measurement. With the help of first-principles calculations based ondensity-functional theory (DFT) and time-dependent DFT, the real-space atomicmotion and the temperature of both electrons and holes as a function of timeare captured simultaneously, retrieving an anticorrelation between the $A_{1g}$phonon dynamics and carrier temperature. The results reveal a coherent,bi-directional energy exchange between carriers and phonons, which is adynamical counterpart of the static Peierls-Jones distortion, providingfirst-time validation of previous theoretical predictions.

Coherent energy exchange between carriers and phonons in Peierls-distorted bismuth unveiled by broadband XUV pulses