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We measure electronic transport through point contacts in the high-mobilityelectron gas in a Ga[Al]As heterostructure at different temperatures and bulkelectron densities. The conductance through all point contacts increases withincreasing temperature in a temperature window around $T \sim 10 K$ for allinvestigated electron densities and point contact widths. For high electrondensities this conductance exceeds the fundamental ballistic limit (Sharvinlimit). These observations are in agreement with a viscous electron transportmodel and previous experiments in graphene.

Superballistic electron flow through a point contact in a Ga[Al]As heterostructure