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We introduce a new method to continuously map inhomogeneities of a moir\'elattice and apply it to large-area topographic images we measure on open-devicetwisted bilayer graphene (TBG). We show that the variation in the twist angleof a TBG device, which is frequently conjectured to be the reason fordifferences between devices with a supposed similar twist angle, is about0.08{\deg} around the average of 2.02{\deg} over areas of several hundred nm,comparable to devices encapsulated between hBN slabs. We distinguish between aneffective twist angle and local anisotropy and relate the latter toheterostrain. Our results imply that for our devices, twist angle heterogeneityhas a roughly equal effect to the electronic structure as local strain. Themethod introduced here is applicable to results from different imagingtechniques, and on different moir\'e materials.

Measuring local moir\'e lattice heterogeneity of twisted bilayer graphene