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The main feature of amorphous materials is the presence of excess vibrationalmodes at low energies, giving rise to the so called "boson peak" in neutron andoptical spectroscopy. These same modes manifest themselves as two level systems(TLSs) causing noise and decoherence in qubits and other sensitive devices.Here we present an experiment that uses the spin relaxation of dangling bondsat the Si/(amorphous)SiO$_2$ interface as a probe of TLSs. We introduce a modelthat is able to explain the observed non-exponential electron spin inversionrecovery and provides a measure of the degree of spatial localization andconcentration of the TLSs close to the interface, their maximum energy and itstemperature dependence.

Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO$_2$ interface