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We review low and high field magnetotransport in 80 nm-thick strained HgTe, amaterial that belongs to the class of strong three-dimensional topologicalinsulators. Utilizing a top gate, the Fermi level can be tuned from the valenceband via the Dirac surface states into the conduction band and allows studyingLandau quantization in situations where different species of charge carrierscontribute to magnetotransport. Landau fan charts, mapping the conductivity $\sigma_{xx}(V_g, B) $ in the whole magnetic field - gate voltage range, can bedivided into six areas, depending on the state of the participating carrierspecies. Key findings are: (i) the interplay of bulk holes (spin-degenerate)and Dirac surface electrons (non-degenerate), coexisting for $ E_F $ in thevalence band, leads to a periodic switching between odd and even fillingfactors and thus odd and even quantized Hall voltage values. (ii) A similarthough less pronounced behavior we found for coexisting Dirac surface andconduction band electrons. (iii) In the bulk gap, quantized Dirac electrons onthe top-surface coexist at lower B with non-quantized ones on the bottom side,giving rise to quantum Hall plateau values depending - for a given fillingfactor - on the magnetic field strength. In stronger $ B $ fields, Landau levelseparation increases, charge transfer between different carrier species becomesenergetically favorable and leads to the formation of a global (i.e. involvingtop and bottom surface) quantum Hall state. Simulations using the simplestpossible theoretical approach are in line with the basic experimental findings,describing correctly the central features of the transitions from classical toquantum transport in the respective areas of our multicomponent charge carriersystem.

Quantum Hall effect and Landau levels in the 3D topological insulator HgTe