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Geometric phases in condensed matter play a central role in topologicaltransport phenomena such as the quantum, spin and anomalous Hall effect (AHE).In contrast to the quantum Hall effect - which is characterized by atopological invariant and robust against perturbations - the AHE depends on theBerry curvature of occupied bands at the Fermi level and is therefore highlysensitive to subtle changes in the band structure. A unique platform for itsmanipulation is provided by transition metal oxide heterostructures, whereengineering of emergent electrodynamics becomes possible at atomically sharpinterfaces. We demonstrate that the Berry curvature and its correspondingvector potential can be manipulated by interface engineering of the correlateditinerant ferromagnet SrRuO$_3$ (SRO). Measurements of the AHE reveal thepresence of two interface-tunable spin-polarized conduction channels. Usingtheoretical calculations, we show that the tunability of the AHE at SROinterfaces arises from the competition between two topologically non-trivialbands. Our results demonstrate how reconstructions at oxide interfaces can beused to control emergent electrodynamics on a nanometer-scale, opening newroutes towards spintronics and topological electronics.

Berry phase engineering at oxide interfaces