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Many nanoelectronic devices rely on thin dielectric barriers through whichelectrons tunnel. For instance, aluminium oxide barriers are used as Josephsonjunctions in superconducting electronics. The reproducibility and drift ofcircuit parameters in these junctions are affected by the uniformity,morphology, and composition of the oxide barriers. To improve these circuitsthe effect of the atomic structure on the electrical response of aluminiumoxide barriers must be understood. We create three-dimensional atomistic modelsof aluminium oxide tunnel junctions and simulate their electronic transportproperties with the non-equilibrium Green's function formalism. Increasing theoxide density is found to produce an exponential increase in the junctionresistance. In highly oxygen-deficient junctions we observe metallic channelswhich decrease the resistance significantly. Computing the charge and currentdensity within the junction shows how variation in the local potentiallandscape can create channels which dominate conduction. An atomistic approachprovides a better understanding of these transport processes and guides thedesign of junctions for nanoelectronics applications.

The effect of atomic structure on the electrical response of aluminium oxide tunnel junctions