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In the recent past, MnTe has proven to be a crucial component of theintrinsic magnetic topological insulator (IMTI) family [MnTe]m[Bi2Te3]n, whichhosts a wide range of magneto-topological properties depending on the choice ofm and n. However, bulk crystal growth allows only a few combinations of m and nfor these IMTIs due to the strict limitations of the thermodynamic growthconditions. One way to overcome this challenge is to utilize atomiclayer-by-layer molecular beam epitaxy (MBE) technique, which allows arbitrarysequences of [MnTe]m and [Bi2Te3]n to be formed beyond the thermodynamic limit.For such MBE growth, finding optimal growth templates and conditions for theparent building block, MnTe, is a key requirement. Here, we report that twodifferent hexagonal phases of MnTe-nickeline (NC) and zinc-blende/wurtzite(ZB-WZ) structures, with distinct in-plane lattice constants of 4.20 +/- 0.04 Aand 4.39 +/- 0.04 A, respectively-can be selectively grown on c-plane Al2O3substrates using different buffer layers and growth temperatures. Moreover, weprovide the first comparative studies of different MnTe phases usingatomic-resolution scanning transmission electron microscopy and show that ZBand WZ-like stacking sequences can easily alternate between the two.Surprisingly, In2Se3 buffer layer, despite its lattice constant (4.02 A) beingcloser to that of the NC phase, fosters the ZB-WZ instead, whereas Bi2Te3,sharing the same lattice constant (4.39 A) with the ZB-WZ phase, fosters the NCphase. These discoveries suggest that lattice matching is not always the mostcritical factor determining the preferred phase during epitaxial growth.Overall, this will deepen our understanding of epitaxial growth modes forchalcogenide materials and accelerate progress toward new IMTI phases as wellas other magneto-topological applications.

Buffer-layer-controlled Nickeline vs Zinc-Blende/Wurtzite-type MnTe growths on c-plane Al2O3 substrates