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We use ab initio calculations and theoretical analysis to investigate theinfluence of in-plane strain field on valley drifts and Berry curvatures in themonolayer MoSi$_2$N$_4$, a prototypical septuple atomic layered two-dimensionalmaterial. The low energy electron and hole valleys drift far off the K/K' pointunder uniaxial strains. The direction and strength of valley drift stronglydepend on the nature of the charge carrier and uniaxial strain with a moresubstantial response along the zigzag path. Our findings are governed by theinterplay between microscopic orbital contribution and symmetry lowering. Thechanging geometric properties of Bloch states affect the Berry curvatures andcircular dichroism. Specifically, Berry curvature dipole is significantlyenhanced under the tensile strain along armchair and zigzag directions.Meanwhile, the particle-hole asymmetry arising from non-equivalent electron andhole valley drifts relax the selection rules, thus reducing the degree ofcircular polarization up to ~0.98. Therefore, strain engineering of valleyphysics in the monolayer MoSi$_2$N$_4$ is of prime importance forvalleytronics.

Probing the uniaxial strain-dependent valley drift and Berry curvature in monolayer MoSi$_2$N$_4$