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Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap>4.0 eV), boron nitride (BN) and diamond are important for next-generationhigh-power electronics. However, in-situ hetero-epitaxy of BN/diamond orvice-versa remains extremely challenging, due to their non-trivial growthkinetics. Here, we have grown BN thin film on (100) single crystal diamond bypulsed laser deposition and investigated its structural and magneticproperties, optical refractive index, and thermal conductivity. Structuralcharacterizations confirm the mixed (stable hexagonal and metastable cubic)phase growth. Film shows diamagnetic behavior at room temperature. It displaysanisotropic refractive index within the visible-to-near-infrared wavelengthrange. The room temperature cross-plane thermal conductivity of BN is ~1.53W/(mK), and the thermal conductance of the BN/diamond interface is ~20MW/(m2K). Our findings are useful for various device related applications basedon UWBG BN/diamond heterostructures.

Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition