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In-situ synthesised semiconductor/superconductor hybrid structures became animportant material platform in condensed matter physics. Their developmentenabled a plethora of novel quantum transport experiments with focus on Andreevand Majorana physics. The combination of InAs and Al has become the workhorsematerial and has been successfully implemented in the form of one-dimensionalstructures and two-dimensional electron gases. In contrast to thewell-developed semiconductor parts of the hybrid materials, the direct effectof the crystal nanotexture of Al films on the electron transport still remainsunclear. This is mainly due to the complex epitaxial relation between Al andthe semiconductor. We present a study of Al films on shallow InAstwo-dimensional electron gas systems grown by molecular beam epitaxy, withfocus on control of the Al crystal structure. We identify the dominant graintypes present in our Al films and show that the formation of grain boundariescan be significantly reduced by controlled roughening of the epitaxialinterface. Finally, we demonstrate that the implemented roughening does notnegatively impact either the electron mobility of the two-dimensional electrongas or the basic superconducting properties of the proximitized system.

Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems