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Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition ofeuropium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlatedwith a shrinking by approximatly 2 % of the crystal lattice along the twoa-axes. Due to this interconnection between lattice and electronic degrees offreedom the influence of strain in epitaxial thin films is particularlyinteresting. Ambient X-ray diffraction (XRD) confirms an epitaxial relationshipof tetragonal EuPd$_2$Si$_2$ on MgO(001) with an out-of plane c-axisorientation for the thin film, whereby the a-axes of both lattices align. XRDat low temperatures reveals a strong coupling of the thin film lattice to thesubstrate, showing no abrupt compression over the temperature range from 300 to10 K. Hard X-ray photoelectron spectroscopy at 300 and 20 K reveals atemperature-independent valence of +2.0 for Eu. The evolving biaxial tensilestrain upon cooling is suggested to suppress the valence transition. Insteadlow temperature transport measurements of the resistivity and the Hall effectin a magnetic field up to 5 T point to a film thickness independent phasetransition at 16-20 K, indicating magnetic ordering.

Clamping effect on temperature-induced valence transition in epitaxial EuPd$_2$Si$_2$ thin films grown on MgO(001)